Lead Principal Engineer Device Development RF-GaN (w/m/div)
Regensburgonsiteprincipal
Posted 2mo ago · via Eightfold
About this role
#WeAreIn for technologies that power the future. Join a team driving cutting-edge RF-GaN innovation for next-generation RF power applications. As a Lead Principal Engineer Device Development RF-GaN (f/m/div), you'll combine deep technical expertise with pioneering development work, shaping advanced device technologies from concept to production while collaborating with international experts across disciplines.…
What we'd score you on
reqspace match rubricFive dimensions, recruiter-grade. Upload your resume and we'll generate a written explanation of where you fit and where the gaps are.
1
Skills match
We compare your skills against the role requirements.
2
Level fit
This role is principal-level. We check your trajectory against it.
3
Domain experience
Your work in the role's domain matters more than your years total. We weight recent and direct experience.
4
Recency
A skill you used last quarter weighs more than one from five years ago. We grade on recency, not lifetime.
5
Location fit
This role is based in Regensburg. We weight your proximity and willingness to relocate.
Score yourself on this role.
Free · no card · written explanation included
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